GaN HEMT modeling including trapping effects based on Chalmers model and pulsed S-parameter measurements / / vorgelegt von Peng Luo.
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| Place / Publishing House: | Gottingen : : Cuvillier Verlag,, 2018. |
| Year of Publication: | 2018 |
| Language: | English |
| Online Access: | |
| Physical Description: | 1 online resource (160 pages) |
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| 020 | |z 9783736999060 | ||
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| 100 | 1 | |a Luo, Peng, |e author. | |
| 245 | 1 | 0 | |a GaN HEMT modeling including trapping effects based on Chalmers model and pulsed S-parameter measurements / |c vorgelegt von Peng Luo. |
| 264 | 1 | |a Gottingen : |b Cuvillier Verlag, |c 2018. | |
| 300 | |a 1 online resource (160 pages) | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 588 | |a Description based on print version record. | ||
| 590 | |a Electronic reproduction. Ann Arbor, MI : ProQuest, 2018. Available via World Wide Web. Access may be limited to ProQuest affiliated libraries. | ||
| 650 | 0 | |a Field-effect transistors |v Congresses. | |
| 655 | 4 | |a Electronic books. | |
| 776 | 0 | 8 | |i Print version: |a Luo, Peng. |t GaN HEMT modeling including trapping effects based on Chalmers model and pulsed S-parameter measurements. |d Gottingen : Cuvillier Verlag, 2018 |h 160 pages |z 9783736999060 |
| 797 | 2 | |a ProQuest (Firm) | |
| 856 | 4 | 0 | |u https://ebookcentral.proquest.com/lib/oeawat/detail.action?docID=5632290 |z Click to View |