Physica status solidi / A. / Volume 83, Number 1, : May 16 / / ed. by Görlich.
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Other title: | Frontmatter -- Classification Scheme -- Author Index -- Contents -- Review Article -- Some Regularities in the Behaviour of the Magnetic, Electrokinetic, and Superconducting Properties of Transition Metal Monocarbide and Mononitride Solid Solutions -- Original Papers -- Structure -- Electrical, Magnetic, and Structural Characterisation of [1,2-Bis(1-ethyl-4-pyridinium)ethane]2+ (7,7,8,8- Tetracyano-p-quinodimethanide)42- -- The Microstructural Properties of (β + (Ni, Al)7Hf2) Eutectics -- The Mechanism of Cell Wall Formation -- Crystallization of High-Dose Antimony-Implanted Silicon by Millisecond Pulse Laser Irradiation -- A High Resolution Electron Microscopic Study of Ordered Structures in Ni3(Ti, V) Alloys -- Pattern Variation of Evaporated Thin Films and Their Non-Pre-Excited TSEE -- A Study of the Non-Stoichiometrical Halogen and Water Content of β-FeOOH -- An X-Ray Investigation of Structural Properties and Electrical Resistivities of Liquid Al, Liquid Cu, and Liquid Al-Cu Alloys -- The Temperature Dependence of the Prepeak in the Diffraction Pattern of the Amorphous Ti61Cu16Ni23 and Ti 62.5 Cu12Ni23Si 2.5 Alloys -- Lattice properties -- Modified Plane, Radial, and Angström Temperature-Wave Techniques for the Measurement of Thermal Properties of Non-Conducting Materials -- Ferroelastic Domain Structure Dynamics and Internal Friction of KH3(SeO3)2 Single Crystals -- Thermal Conductivity of Germanium Doped with Silicon, Tin, and Aluminium -- Structural Anisotropy and Heat Capacity of NbS3 -- Defects, atomistic aspects -- Deviation from Stoichiometry and Electron Transfer in PbMoO4 -- Study of Ge2S3 Glass Undoped and Doped with Metals by Positron Annihilation Technique -- Determination of the Range Profiles of Boron Implanted into Si and SiO2 -- Contribution to the Thermotransport in Silicate Glasses -- Dislocation Motion and Plasticity in MgO Single Crystals -- Plane-Wave X-Ray Images of Dislocations Parallel to the Diffraction Vector -- Oxygen Precipitation and Microdefects in Czochralski-Grown Silicon Crystals -- Absence of Dilatational Defects in Deformed Cu57Zr48 Amorphous Alloy -- Internal and Friction Stresses for Al-Mg Class I High Temperature Creep Alloys -- Short-Range Reordering of Heavy Interstitials in Ta, Nb, and Fe during Relaxation and Static Strain Aging -- Magnetism -- Investigations of the Crystal and Magnetic Structure Heterogeneities of RbMnCl3 -- Amorphous Co-Metal Films Produced by Sputtering -- Extended electronic states and transitions -- Surface Plasmon Modes and Energy Loss Function of Indium Thin Films on Mica Substrates -- Caractérisation optique et électrique de couches mixtes de sulfure de mercure -- X-Ray Emission Study of Bonding in SmT2 Compounds (T = Fe, Co, Ni) -- Localized electronic states and transitions -- Tin Impurity Atoms in Vacuum Deposited Amorphous Silicon -- Colour Centres in Amorphous Tungsten Trioxide Thin Films -- Charge-Carrier Recombination in Silicon Irradiated with γ-Rays of Different Energies -- The Cathodoluminescence Contrast Formation of Localized Non-Radiative Defects in Semiconductors -- The Hot Electron Energy Distribution Function in ZnS:Cu:Cl:Er Thin Films -- Electric transport -- Sm-GraSe Barrier Structures -- Electrical Conductivity of Mixtures of Conducting and Insulating Particles -- Space Charge Limited Conduction in Thin Film V2O5-P2O5-ZnO Glasses -- Thickness Dependence of DC Conductivity of Amorphous Se and Binary Amorphous Se-Te, Se-Ge, and Se-Sb Films -- Thermoelectric Figure of Merit of the System (GeTe)1-x(AgSbTe2)x -- Annealing Effects on Electrical Conductivity and Thermoelectric Power of Sintered PbTe -- Radiation-Induced Conductivity in Polymers under Continuous Irradiation -- Device-related phenomena -- Zur Berücksichtigung der Oberflächenbandverbiegung im Silizium bei Photoinjektion in MOS-Strukturen -- Investigation of the Current Density Distribution of Small Josephson Tunnel Junctions by Fourier Transformation -- Internal Electric Field-Enhanced Impurity Diffusion in GaAs 1-x Px -- A Review of Techniques to Determine the Series Resistance of Solar Cells -- RF Annealing of the Implantation-Induced Defects in Silicon Using Hydrogen Plasma -- Erratum -- Short Notes -- Control of Explosive Liquid-Phase Crystallization of Ion-Implanted Silicon Layers by Double Pulse Laser Irradiation -- The Yield of Photoelectrons of Different Energies in the X-Ray Laue Diffraction -- Optical Properties of Thin GeOx Films -- An Infrared Study of xV2O5•(1-x)B2O3 Glasses -- Dependence of Mechanoluminescence on the Microhardness and Dislocation Density in Crystals -- Specific Heat of SrTiO3 in the Range 0.5 to 6 K -- Analysis of Photoacoustically Investigated Gaseous Heat Transfer between Solid Surfaces -- Observation of Anisotropic Internal Stresses by Electroreflectance and Transverse Photovoltaic Effect Measurements -- Position Annihilation in Electron-Irradiated p-ZnGeP2 Compound -- A New Evidence for Hole-Induced Thermo-Exoemission -- A Semi-Empirical Relation between the Magnetic Susceptibility and Porosity of Sintered Iron -- Photoinduced Optical Absorption in As-Se -- Fundamental Optical and Photoelectric Properties of Poly- and Mono-Crystals of Zn3Pg2 -- Effects of Heat Treatment on the Optical Absorption of Amorphous In30Se70 Films -- Photoelectrical and Optical Properties of GaSe:Yb Single Crystals -- Stimulated Emission of Er3 and Ho 3+ Ions in KLa(McO4)2 Crystals -- Temperature Dependence of Currents in Thin Films of Silicon Oxide -- Li+ Ionic Conductivity in LiNbO3 -- Electrical Conduction in SnTe Thin Films -- Computer Simulation of Generation-Recombination Currents in Amorphous Silicon p-n Diode Structures -- Damage Induced Degradation of Metal Contacts on Gallium Arsenide -- Pre-Printed Titles |
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Format: | Mode of access: Internet via World Wide Web. |
ISBN: | 9783112501603 9783110637342 |
DOI: | 10.1515/9783112501603 |
Access: | restricted access |
Hierarchical level: | Monograph |
Statement of Responsibility: | ed. by Görlich. |
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