Physica status solidi / A. / Volume 85, Number 2, : October 16 / / hrsg. von Görlich.

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Superior document:Title is part of eBook package: De Gruyter DGBA Reference Works <1990
MitwirkendeR:
Alameda, J. M.,
Alonso, J. A.,
Alyabiev, V. M.,
Aroba, A. K.,
Aronov, D. A.,
Atmani, H.,
Aubin, M.,
Azimov, S. A.,
Baker, I.,
Baltrunas, D.,
Barbulescu, A.,
Basson, J. H.,
Baum, B. A.,
Berthel, K.-H.,
Besirganyan, P. A.,
Blasek, G.,
Blazha, M. G.,
Blinc, R.,
Booyens, H.,
Brehme, S.,
Cabrera-Caño, J.,
Castaing, J.,
Chernyi, V.,
Chudinov, V. G.,
Contreras, M. C.,
Corbett, J. W.,
Couzi, M.,
Daluda, Yu. N.,
David, M.,
Denisenko, G. A.,
Dietsch, R.,
Dini, K.,
Domínguez-Rodríguez, A.,
Dunaev, A. F.,
Dunlap, R. A.,
El-Sharkawy, A. A.,
Emtsev, V. V.,
Esina, N. P.,
Esnouf, C.,
Fantozzi, G.,
Filaretova, G. M.,
Fukuda, Y.,
Gabrielyan, R. Ts.,
Gaworzewski, P.,
Gevers, R.,
Ghoniem, M. H.,
Ghosh, S.,
Glaefeke, H.,
Golinsky, H.-Chr.,
Gopal, E. S. R.,
Goshchitskh, B. N.,
Gronkowski, J.,
Gubskaya, V. I.,
Gushchin, V. S.,
Hargraves, P.,
Hashimoto, H.,
Hergert, W.,
Hermoneit, B.,
Herremans, W.,
Herrmann, R.,
Hess, H.,
Ikezaki, K.,
Ishii, T.,
Iwata, M.,
Jacobs, K.,
Jog, K. N.,
Kaciulis, S.,
Kaminskii, A. A.,
Karandashev, S. A.,
Khan, S.,
Kibickas, K.,
Klikorka, J.,
Kohmoto, O.,
Kohn, V. G.,
Koizumi, M.,
Kraak, W.,
Krasnaya, A. R.,
Krause, H.,
Krech, W.,
Kuchinskii, P. V.,
Köhler, H.-J.,
Lauzier, J.,
Lemke, H.,
Lindstrom, J. L.,
Lomako, V. M.,
Lomonov, V. A.,
Loyzance, P. L.,
Lugakov, P. F.,
Lukashevich, T. A.,
Lung, C. W.,
López, J. M.,
Malek, J.,
Malgrange, C.,
Maltsev, V. I.,
Marquez, R.,
Meyer, H.-G.,
Michon, P.,
Micocci, G.,
Minier, C.,
Miura, T.,
Moseev, N.V.,
Nebauer, E.,
Nespurek, S.,
Oehrlein, G. S.,
Ohkawa, T.,
Oster, L. N.,
Parseliunas, J.,
Parthasarathy, G.,
Pasemann, L.,
Pavlov, V. A.,
Pawelek, A.,
Perlin, Yu. E.,
Pickenhain, R.,
Pozhidaev, E. D.,
Protasov, V. I.,
Rashed, I. H.,
Rauschenbach, B.,
Reiche, P.,
Riedel, M.,
Rizzo, A.,
Rubinov, V. M.,
Rubio, H.,
Rudlof, G.,
Ryabchenkov, V. V.,
Saenko, V. S.,
Sandow, E.,
Sanyal, S. P.,
Sarkisov, S. E.,
Sasaki, A.,
Schaller, U.,
Schauer, F.,
Schell, M.,
Schmalz, K.,
Schneider, F.,
Schulson, E. M.,
Schultze, D.,
Seidel, P.,
Seifert, W.,
Sen, K.,
Shalaev, V. I.,
Shimada, M.,
Shuvalov, L. A.,
Sidorov, V. E.,
Sincan, Lucia,
Singh, R. K.,
Sircar, P.,
Suezawa, M.,
Sumino, K.,
Svensson, B. G.,
Taguchi, H.,
Takeuchi, N.,
Tepore, A.,
Tichy, L.,
Tomita, A.,
Toneyan, A. H.,
Topic, B.,
Tuichiev, M.,
Tyagi, B. P.,
Tyutnev, A. P.,
Unterricker, S.,
Vannikov, A. V.,
Vautier, C.,
Vologin, V. G.,
Walz, F.,
Wesch, W.,
Yaskolko, V. Ya.,
Zaghloul, M. S.,
Zmeskal, O.,
Zotova, N. V.,
HerausgeberIn:
Place / Publishing House:Berlin ;, Boston : : De Gruyter, , [2022]
©1984
Year of Publication:2022
Edition:Reprint 2021
Language:German
Series:Physica status solidi / A. ; Volume 85, Number 2
Online Access:
Physical Description:1 online resource (460 p.)
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Other title:Frontmatter --
Classification Scheme --
Contents --
Review Article --
Effect of Dislocation Structure on Creep and Fracture of Metals and Alloys (II) --
Original Papers --
Structure --
On the Polarization Mixing of X-Rays. Quantum Theory of Interference of White X-Rays --
Six-Beam X-Ray Diffraction in Ge Single Crystals --
Group-to-Subgroup Relations in Space Groups. Application to the Structural Phase Transitions in the Perovskite-Type Layer Compounds RbAlF4 and RbVF4 --
Fast-Electron Diffraction near a Translation Interface on Edge. The Generalized Dispersion Relation --
Fraunhofer Diffraction of X-Ray Beams at Bragg Incidence in Distorted Crystals --
Crystallization Study of Evaporated a-Se Films by Means of DTA Technique --
Lattice properties --
87Rb NMR in Monoclinic RbD2PO4 --
The Relative Stability and Phase Transition Studies of MgO and CaO Crystals --
The Atomic Size-Mismatch Contribution to the Enthalpy of Formation of Concentrated Substitutional Metallic Solid Solutions --
Study of Thermal Properties of Polycrystalline KCl, KBr, and KI in the Temperature Bange 300 to 600 K --
Defects, atomistic aspects --
Possible Amorphisation and Phase Separation of Intermetallic Mo3Si Compound under Radiation. Molecular Dynamics Study --
Formation and Parameters of Boron-Divacancy Complexes in Irradiated p-Si --
High-Temperature Creep of Equimolecular NiO-CoO Solid Solution --
On the Optimal Choice of Substrate for Hg0.8Cd0.2Te Epitaxial Layers --
Radiation Damage and Its Annealing Behaviour in InP after Recoil Implantation of 118Sb and 111In Observed by TDPAC --
Internal Friction at Low Temperature in High Purity Magnesium --
On the Annihilation of Thermal Donors in Silicon Crystals --
Modification of Concentration Profiles in Iron and Aluminium by High-Fluence Implantation of Nitrogen and Boron Ions --
On Intrinsic Stacking Faults in Polycrystalline Ni3Al --
Isochronal Annealing Study of Aggregation in Doped Alkali Halide Crystals --
Magnetism --
Magnetic Structure of y-Iron Containing Oxygen --
Transition-Induced Magnetic After-Effect in the Amorphous Alloy Fe20Ni56B24 at the Critical Temperature --
Magnetic Properties of Amorphous FexS1-xFilms (I) --
Magnetic Properties in the System (Sr1-xCax) CoO3-0 --
Neutron Diffraction Studies of the Magnetic Ground State in Li-Zn Ferrite --
Extended electronic states and transitions --
Amplitude Modulation and Demodulation of Electromagnetic Waves in Magnetised Semiconducting Plasmas --
Localized electronic states and transitions --
Luminescent Properties of Zinc Silicate Doped with Gallium --
Growth, Spectral and Luminescence Study of Cubic Bi4Ge3O12:Pr3+ Crystals --
Hopping Conduction in SiO2 Films Thermally Grown on Phosphorus-Doped Polycrystalline Silicon --
Electrical Properties of Thermal Donors Formed in CZ-Si during Heat Treatment at 450 °C --
The Effect of the Vacancy Charge State on the Radiation Defect Formation in Silicon --
Electric transport --
Temperature Dependence of Transient Radiation-Induced Conductivity in Polymers --
Grain Size and Temperature Dependence of the Electrical Behaviour of Polysilicon --
Photoconductivity in Halogenated and Hydrogenated Amorphous Silicon Films --
Thermal Influence of Vacuum Deposition of Metallic Electrodes on TSC from Positively Corona-Charged Polyethylene Films --
An Ohmic Contact Test Using the Activation Energy of Steady-State Space-Charge-Limited Current --
Device-related phenomena --
Green and Yellow Light Emitting Diodes Produced from Vapour Phase Epitaxial GaP:N (I) --
Theoretical Study of the Information Depth of the Cathodoluminescence Signal in Semiconductor Materials --
Pulsed UV Laser Processed Gold and Aluminum Ohmic Contacts on n+-GaAs --
Tunneling Surface Recombination in MS Structures on p-InAs --
Short Notes --
A Study of the Possibility of Restoration of Composition of SnTe Oxidized Epitaxial Layers by Means of NGR Spectroscopy --
Hydrogen Absorption and Crystallization in Amorphous Co90Zr10 --
Anisotropy of Microhardness in Anthracene Single Crystals --
On the Complex of the Oxygen Interstitial and the Silicon Interstitial in Silicon --
Interaction of a Dislocation with a Crack --
A Simple Model of Small Yield Point Due to Strain Rate Change Based on the Dynamics of the Source Generated Dislocation Group --
Exponential Absorption Edge in Ge20Sb15S65 Glass Depending on Sample Preparation --
Absorption Edge Shift in the Pb0-SiO2 System --
Eigenschaften der Energieniveaus von Kobalt in Silizium --
Eigenschaften der Energieniveaus von Rhodium und Iridium in Silizium --
Thermoluminescence and Thermally Stimulated Exoelectron Emission in Glass and Sintered CaB4O7: CuCl2 --
Exoelectron Emission from Calcium Sulfate Excited by Slow Electrons --
Remarks about a New, Constructive Method for the Analysis of Thermally Stimulated Relaxation Processes (TSRP) --
Electrical Resistivity of Amorphous Co-Rich FeCo-SiB Alloys --
On the Mechanism of Current Passage in Gallium Phosphide Films Excited by Light or a Beam of Accelerated Electrons --
Unusual Effect of Tellurium Doping on the Electrical Properties of Bulk Amorphous Selenium --
Ohmic AuGe Contacts on n-GaAs Produced by Nanosecond Laser Pulse Irradiation --
The Influence of Microwaves on the Current-Voltage Characteristic of Nb-NbOx-Pb Josephson Tunnel Junctions --
Dependence of I-U Characteristics of GaAs n+-n-n+ Diodes on the Active Region Length --
Sensitive Pressure Gauge on the Basis of Pure n-InSb --
Pre-Printed Titles --
Pre-Printed Titles of papers to be published in the next issues of physica status solidi (a) and physica status solidi (b) --
Classification Scheme — Continued --
Backmatter
Format:Mode of access: Internet via World Wide Web.
ISBN:9783112501382
9783110637342
DOI:10.1515/9783112501382
Access:restricted access
Hierarchical level:Monograph
Statement of Responsibility: hrsg. von Görlich.