Physica status solidi / A. / Volume 55, Number 2, : October 16 / / ed. by Görlich.
Na minha lista:
Other title: | Frontmatter -- Classification Scheme -- PROFESSOR Dr. Dr. h.c. HEINZ BETHGE -- Contents -- Original Papers -- On Cluster Mobilities in Nucleation and Growth Processes of Epitaxial Thin Films -- On the Saturation Cluster Density in Deposition of Thin Films from Vapours -- Conditions of Step Decoration on Crystal Surfaces -- Observation of NaCl-LiCl High-Temperature Phases by Gold Decoration on the Solid-Melt Interface of Czochralski Grown Crystals -- On the Gold Decoration of KCl:Pb Crystal Surfaces -- Observation and Interpretation of Spirals for Spiral Growth from the Liquid State -- Monte-Carlo Simulation of Dendritic Growth from the Melt -- Formation of Aluminium Thin Films in the Presence of Oxygen and Nickel -- Sulphur Segregation on the (111) Iron Surface Studied by LEED, AES, and WFC -- Stationary Stochastic Adparticle Flip-Flop as a Precursor to Surface Diffusion -- A Theory of the Snoek-Köster Relaxation (Cold-Work Peak) in Metals -- Cross Slip of Single Dissociated Screw Dislocations in Silicon and Germanium -- Aggregation and Precipitation Hardening in NaCl : Ca Crystals -- Formation of Radiation-Induced Voids on Dislocations in LiF -- TEM Studies of Displacement Cascades in Ion-Bombarded Cu3Pd and Fe3Al -- Precipitation and Dissolution Processes in Age-Hardenable A1 Alloys. A Comparison of Positron Annihilation and X-Ray Small-Angle Scattering Investigations (I) -- Problems of the Formation of Dislocation Structures in Heteroepitaxial Layers -- Crack Propagation in MgO during In-Situ Deformation in the High-Voltage Electron Microscope -- Microstructure Dependence of the Brittle Fracture of Alumina -- Penetration and Resolution of STEM and CTEM in Amorphous and Polycrystalline Materials -- Methodical Aspects of HVEM in In-Situ Experiments in the Field of Condensed Matter -- The Role of Environmental Conditions in In-Situ Experiments in the High-Voltage Electron Microscope -- On the Determination of Intergranular Orientation Relationships by Kikuchi Electron Diffraction -- Analysis of Many-Beam Lattice Images of Y - A l Garnet Crystals -- Dislocation Emission in CdS -- Measurements of Microfields on Semiconductors -- Alignment of Defects in Ge Implanted with Te+ Ions -- On X-Ray and Electron Microscopic Characterization of Lattice Defects in AIIBVI Semiconductor Compounds -- Combined Scanning (EBIC) and Transmission Electron Microscopic Investigations of Dislocations in Semiconductors -- Vieillissement dynamique dans l'alliage Fe-Co-2%V -- Influence of the Lattice Component on the Thermal Conductivity Minimum of Aluminium -- Electronic Conduction in Dye-Sensitized Selenium Films -- The Effect of Ag Impurity on the Real Structure of ZnTe -- Distribution of Ion-Bombardment Implanted 85Kr in Si, Cu, and SiO2 -- Photoconductive Properties of Sputtered TiO2 Films -- On the Theory of Double Injection in Semiconductors with Continuous Distribution of Trapping Levels within the Gap -- On the Room Temperature Stability of Metastable Phases Formed at 200 °C in Al-Zn Alloys -- Imaging Hexagonal Based Superstructures. A New Stable Orthorhombic Structure in the Au-Mn System -- The Phenomenon of Controllable Hydrogen Phase "Naklep" of Metals and Alloys -- On the Electrical Activity of Oxygen in Silicon -- Electron Microscopic Study of the Domain Structure and of the Transition State in Cu0.5In2.5Se4 -- Spectroscopic Study of Phase Polymorphism and Vibrational Assignments for 2,2-Dinitropropane -- A Study of Thermal Conversion of Interstitials in Platinum by Means of Electrical Resistivity Measurements -- TEM Method for Identification of Domains in Materials Which Undergo a Pm3m -> R3c or R3c Phase Transition -- The Stress Relaxation of Polyvinyl Chloride in the Macrodeformation Range -- Magnetostriction Measurements on Co-Base Amorphous Alloys -- The Electrical Recombination Efficiency of Individual Edge Dislocations and Stacking Fault Defects in n-Type Silicon -- Flow Stress and Activation Volume of Some Cold-Worked Copper-Based Solid Solutions -- A Novel Technique for Preparing Tungsten Field Cathodes with [001] Orientation -- Grain Boundary Analysis in TEM (III) -- Short Notes -- Influence of Structural Defects and Concentration Inhomogeneities in GaAs Epitaxial Layers on Reverse I-U Characteristics of Schottky Barrier Diodes -- Silicon Beam Epitaxy for Fabrication of Devices -- Entropy and Volume of Solution of Substitutional Impurities in Solids -- Helical Density Waves in a Strongly Degenerate Electron-Hole Plasma -- Domain Wall Resonance in Zn and Cu Substituted Magnetite -- Zur Auswertung der Gleichungen der Lindhard-Scharff-Schiott-Theorie -- Debye Temperatures of Silver and Aluminium at High Temperatures. Some New Correlations -- The Crystal Structures of HoF3 and TbF3 by Neutron Diffraction -- Theimoluminescence of Z1 Centres in NaCl:Ca -- The Effect of Real Structure on Optical Properties of ZnTe -- Observation of Conductivity Anomalies in Small Needle-Like Crystals of TEA(TCNQ)2 -- High Orientation of Coprecipitated Barium Ferrite by Uniaxial Hot- Pressing -- Photovoltaic Effect and Photoconductivity in Reduced Potassium Niobate Crystals -- Activation theimique de la deformation plastique de l'oxyde cuivreux -- Electronic Mobility in Polyethylene Terephthalate -- Overlapping between Magnetic and a-y Transition in the FePd System -- Critical Damping Condition in IMP ATT Diodes -- Pre-Printed Titles -- Pre-Printed Titles of papers to be published in the next issues of physica status solidi (a) and physica status solidi (b) -- Classsification Scheme — Continued -- Backmatter |
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Formato: | Mode of access: Internet via World Wide Web. |
ISBN: | 9783112500989 9783110637342 |
DOI: | 10.1515/9783112500989 |
Acesso: | restricted access |
Hierarchical level: | Monograph |
Statement of Responsibility: | ed. by Görlich. |
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