Physica status solidi / A. / Volume 52, Number 2, : April 16 / / ed. by Görlich.
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Table of Contents:
- Frontmatter
- Classification Scheme
- Contents
- Original Papers
- X-Ray Study of the Structural Phase Transition in Nickel Hexammine Perchlorate
- Peculiarities in the Temperature Dependence of Electrical Resistivity of Metallic Glasses
- Lorenz Function and Horizontal and Vertical Component of Thermal Resistivity of Tin Monocrystals
- Thermoelectric Properties of Indium Antimonide under High Pressure up to 35 kbar
- Parametric Instability of Acoustic Waves in Transversely Magnetised Piezoelectric Semiconductors
- A Mossbauer Study of the Effects of y-Rays and Neutron Irradiation on Iron Oxalates
- The Influence of High-Frequency Radiation on the U-I Characteristics of Superconducting Tin Whiskers
- Investigation of Chemical Micro-Inhomogeneities in Bi100-xSbx Single Crystals
- Dependence of Dislocations on Emitter Phosphorus Diffusion Conditions and Their Effects on Electrical Characteristics of Silicon Planar NPN Transistors
- On the Nature of the "Limiting" Position of the Fermi Level in Irradiated Silicon
- Grain Boundaries during Superplastic Deformation
- Elastic Constants of a Stressed Crystal (I)
- Minority Carrier Lifetime in Silicon after Ar+ and Si+ Implantation
- X-Ray Diffraction Study of the Effect of Hydrogen Atoms on the Si-Si Atomic Short-Range Order in Amorphous Silicon
- Lifetimes of Laser-Induced Population Density Gratings in Ruby
- A Model for High-Temperature Creep Incorporating Both Recovery and Thermally Activated Glide
- Effects of Thermal Relaxation on an Amorphous Superconducting Zr-Rh Alloy
- Self-Diffusion of 60Co and 72Ga in the Ordered Electronic Compound CoGa
- FIR Spectroscopy Study of the First-Order Phase Transition of (CH3CH2NH3)2CdCl4
- Electron Diffraction from Periodic <111> Twist Grain Boundary Structures
- Chemical Bond and Related Properties of SiO2 (VI)
- Microscopic and Macroscopic Inhomogeneity of Magnetization and Anistropy in Amorphous Rare Earth/Transition Metal Films
- Electrical Properties of CuGaTe2 Epitaxial Layers
- Tunnel Hopping Current and Trap Filling in Insulating Layers
- On the Sink Concentration Dependence of Reaction Constants for Point Defect Trapping
- Bitter Figure Observations on U3As4 at Low Temperatures
- Optical Constants of Sodium Sulphide
- Absorption Shift in Aluminophosphate Glasses
- Threading Dislocations in Single-Layer Heteroepitaxial Structures
- Spin-Lattice Relaxation Time and Quadrupole Coupling of Deuterium in PdD0.70
- Photoinduced Optical Anisotropy in Chalcogenide Vitreous Semiconducting Films
- Aluminum Polygonization under High Pressure
- Superlattice Dislocations in Cu2NiZn
- Magnetic Phase Diagrams of Cex(La0.76Y0.24)1-xSb Compounds
- Deep Levels in Fe-Doped GaP
- Stress-Induced Anomalies in the Internal Friction of Strontium-Doped Silver Bromide
- Discrete Dislocation Analysis of Cracks
- Analysis of the Crystal Binding of Alkali Hydrides
- Structural, Electrical, and Magnetic Properties in the System BaxLa1-xCoO3
- Transmission Electron Microscopy of Radiation Damage in Nb3Sn
- Non-Radiative Energy Transfer from Dy3+ -> Ho3+ in Calibo Glass
- Magnetic Properties of Hydrogen Solid Solutions in Fe-Ni-Mn Alloys
- Electron Microscopy Study of Pure and Doped Synthetically Grown CaF2 Crystals
- Short Notes
- X-Ray Diffractional and Optical Investigations of Ferroelectric SrTeO3
- Mise en évidence de la coordination tétraédrique de l'ion Cr3+ dans un chromigallate de lithium par analyse du spectre électronique
- Precipitation in KCl:Pb2+ Crystals
- Local Environment Effects in Ni-Cu and Ni-Au Alloys
- ESR Study of Oxygen Radicals Formed in Cadmium Sulphide
- An Approximation of the Einstein Relation for Heavily Doped Silicon
- Thermal Activation Analysis of Plastic Deformation of PbS Single Crystals
- A Remark on Determining Activation Energies by Fractional Glow Technique (FGT) in Case of Complex Glow Spectra — A Procedure of Improving This Method
- Temperature Dependence of the Optical Ionization Energy of Deep Local Levels in CdSe Single Crystals
- F-Band Absorption and Thermoluminescence of KC1 Single Crystals under DC Field and X-Ray Irradiation
- Temperature Dependence of the Energy Gap in PbS, PbSe, and PbTe
- Influence of the Substrate Temperature on the Dielectric Relaxation of Amorphous Selenium Layers in the Glass Transition Range
- Enhancement of Magnetic Field in "Window"-Type Tunnel Junctions
- Self-Diffusion and Dynamical Recovery in Silicon at High Temperatures
- Cation Distribution in Cobalt Ferrite-Aluminates
- Defect Levels in Pbl2 by TSC Measurements
- Notes on the First-Order Ferroelectric Phase Transitions in an Electric Field
- Thermally Stimulated Depolarization Currents in Ceramic ThO2
- Penetration of Electromagnetic Fields through Thin Layers of Tin
- Uncompensated Titanium(3+) Center in -Quartz
- Effective Mass of Holes in Pb1-xSx Te
- Determination of the Dielectric Constant of GaP from S-C Donor-Acceptor Pair Spectra
- Avalanche Multiplication of Electron-Beam Excited Carriers in GaP p-n Junction
- Some Remarks on the AC Behaviour of Thin Sputtered Amorphous GeSe Films
- The Temperature and Pressure Dependence of the Dielectric Constants of CaO and SrO
- A New Method for Quantitative Analysis of the Mossbauer Effect
- Pre-Printed Titles
- Pre-Printed Titles of papers to be published in the next issues of physica status solidi (a) and physica status soldii (b)
- Classification Scheme —Continued
- Backmatter
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