Physica status solidi / A. / Volume 51, Number 1, : January 16 / / ed. by Görlich.
שמור ב:
| Other title: | Frontmatter -- Classification Scheme -- Author Index -- Contents -- Review Article -- Boron and Boron-Based Semiconductors -- Original Papers -- On the Relationship of the Effects of Systematic Reflections in H.C.P. Cobalt to the Critical Voltage -- The Structure of Silicon Nitride Films -- Temperature Dependence of the Absorption Edge in CuGaS2 -- On the Theory of Current-Voltage Characteristics of Semiconductor Diode Structures with Strong Carrier Accumulation -- Slip Systems in Deformed Anthracene Crystals -- DLTS Capacitance Studies on Deep Level Centres in VPE GaP:N -- Measurement of Range Distributions of Zinc and Nitrogen Ions in Multiple-Layer Substrates with the Secondary Ion Microprobe -- Quasi-Lifetime Topography of Magnetic Domain Movements in Grain Oriented (100) [001] Fe-3 wt% Si Polycrystals Using White Synchrotron Radiation -- On the Model o! the Potential Function v(x) -- Dielectric Behaviour of Ferroelastic Monodomain TSCC Crystals -- Adsorption-Induced Exoelectron Maximum of BeO Ceramics -- Electro- and Thermotransport in Vanadium -- High Resolution Electron Microscopic Study of Ordering in Monoclinic Au5Mn2 -- Ferromagnetic Resonance Absorption in a Thin Uniaxial Platelet with Stripe Domain Structure Magnetized along the Easy Axis -- A Three-Dimensional Computer Simulation for the Tensile Deformation of Amorphous Iron -- Optical, Magnetic, and Magnetooptical Properties of the Europium Silicate Glass Eu 0.14 Si 0.31 O 0.55 -- The Intermetallic System LiCd 1-x Tlx -- Effect of Reanodization on Exoelectron Emission of Anodic Ta2O5 Films -- Penetration Depth of Superconducting Films Measured with Nb-NbO^-Pbln Josephson Junctions -- Band Structure Effects on the Current-Voltage Characteristics of Me-GeS-Me Junctions in the Field Emission Region -- Effect of Crystallographic Orientation on the Polytype Stabilization and Transformation of Silicon Carbide -- Dislocation Dynamics in the Plastic Deformation of Silicon Crystals -- Film Growth and Magnetic Anisotropy of Thin Ni Electrodeposits on (001) Cu Films -- Doping Effects of Sb and Ga on Evaporated Amorphous Ge -- Phase Transition Effects in the EPR Spectrum of Mn 2+ in Magnesium Fluosilicate -- Positron Annihilation in Amorphous Alloys -- Effect of Cold-Work on the Mechanism Controlling the High-Temperature Creep in Al-2 wt% Mg -- Near-Surface Effect in Self-Diffusion in NbCx -- Photo- and Electro-Luminescence of Poly crystalline BaS:Cu Phosphors -- Electrical Properties of V2O5-P2O5 Glasses Containing Metallic Particles -- Computer Simulation of the Two-Phase Diffusion-Controlled Dissolution in the Planar Finite Multilayer Couples -- Stress-Induced Interaction and Ordering in B.C.C. Solutions of V, Nb, Ta, and α-Fe -- Double Injection into Structures with a Low-Conductivity Region -- Erratum -- Short Notes -- X-Ray Investigation of Needle-Like Crystals of CdIn2Se4 -- Application des figures d'attaque à l' etude des mâcles de croissance dans le ZnSe monocristallin -- The Time Dependence of the Flatband Voltage Shift of MPS Capacitors Caused by the Injection of Minority Carriers from Si into SiO2 -- Influence of Order on Mossbauer Spectra of 119Sn in Ni3Fe -- Photoluminescence Spectra of n-Type GaAs:Sn Crystals -- Magnetic Properties of CoMnSi and CoMnSi 0.85 Ge 0.15 -- Comments on the Modification of Schottky Barrier Height by Interfacial Oxides -- Thermal Conductivity of Ternary Compounds -- Magnetic Ordering Temperatures in Rare Earth-Feg Laves Phases Determined by DTA -- Anomalies of the Electrical Conductivity in the TCNQ Complex Salt Formed from the Cation (Methyl-1-N-Ethyl Benzimidazolium -- On the Electroluminescent Efficiency of SiC Diode Types -- On the Determination of the Energy of Charged Walls in Magnetic Domain Structures -- Behaviour of the Thermopower of Cerium under Pressure up to 7500 MPa -- Dynamic Gratings in Cadmium Telluride -- I-U Characteristics of Al-Al2O3-Hg Systems -- Magnetic Phase Transition in UPd2Si2 -- A New Expression for Diagonal Components of the Permeability Tensor and Resonance in Partially Magnetised Ferrites -- Annealing Mechanism of Radiation Damage and Dopants in Pulsed Laser Light Irradiated Ion Implanted Layers -- Effects of Emitter Diffusion-Induced Stresses on the Common-Emitter Current Gain of Silicon Planar Transistors -- Diffusion Coefficient in Heavily Doped Silicon -- High-Pressure Cubic Phase of RbMnClg3- Magnetic Properties -- Photomagnetoelectric Effect in Strongly Excited CdxHg 1-x Te -- Soft Modes and the Raman Spectrum in KSc(MoO4)2 at Ferroelastic Phase Transitions -- The Anion Mobility in /3-PbFg from Noise Measurements -- Pre-Printed Titles -- Mamiscripts and letters for physica status solidi (b) — basic research and physica status solidi (a) — applied research |
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| פורמט: | Mode of access: Internet via World Wide Web. |
| ISBN: | 9783112495209 9783110637342 |
| DOI: | 10.1515/9783112495209 |
| גישה: | restricted access |
| Hierarchical level: | Monograph |
| Statement of Responsibility: | ed. by Görlich. |
פריטים דומים
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Physica status solidi. / Volume 2, Number 5, : 1962 / / ed. by E Gutsche.
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Physica status solidi. / Volume 2, Number 6, : 1962 / / ed. by E Gutsche.
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Physica status solidi. / Volume 2, Number 12, : 1962 / / ed. by E Gutsche.
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Physica status solidi. / Subject and Author Index 1990 ; Physica Status Solidi (b) Basic research, Volumes 157 to 162. Physica Status Solidi (a) Applied research, Volumes 117 to 122 / / ed. by E. Gutsche.
יצא לאור: ([2022]) -
Physica status solidi. / Subject and Author Index 1986 ; Physica Status Solidi (b). Basic research, Volumes 133–138. Physica status solidi (a). Applied Research, Volumes 93–98 / / ed. by E. Borchardt.
יצא לאור: ([2022])