Physica status solidi / A. / Volume 88, Number 1, : May 16 / / ed. by Görlich.
Saved in:
Other title: | Frontmatter -- Classification Scheme -- Author Index -- Physica status solidi (a) applied research -- Contents -- Review Article -- Injection of Degenerate Electron-Hole Plasma -- Original Papers and Short Notes -- Structure -- AC Conductivity, Calorimetric, X-Ray, and Raman Study of the Hexagonal Phase TlInS2-III -- Coherence Description of a Double Crystal Diffractometer -- Effect of Structure Transformation on Creep and Creep Recovery of Al-14 wt%Zn -- Exact Solution of the Takagi-Taupin Equation for Dynamical X-Ray Bragg Diffraction by a Crystal with a Transition Layer -- Double-Crystal Topographic Investigation of Misfit Dislocations in Silicon Epitaxial Layers -- Thin e-Phase Films Prepared by Alloy Evaporation -- Shape and Arrangement of the "Hexagonal Domain" and Distribution of Ferroelectric Domains in GASH Single Crystals -- Destructive Interference and Multiple Scattering Effects Observed in Ca K-Edge EXAFS Spectra -- Determination of Thermodynamic Parameters of the Amorphous Selenium Films Crystallization -- Phase Transition in the System Solid-Gas Admixture Due to the Macroscopic Defect Formation and Growth -- The Structure of Twist Boundaries in Terms of Surface Dislocations -- The Transformation e -> a" in Iron-Nitrogen Solid Solutions Studied by Mössbauer Spectrometry -- An X-Ray Interferometer with an Elastically Deformed Crystal -- The Application of Landau's Theory for Studying First-Order Phase Transitions by the Internal Friction Method -- Lattice properties -- Neutron Powder Diffraction Study of the Debye-Waller Factor in TiC and TiN Compounds and Comparison with X-Ray Results -- Surface Layers and Far-Infrared Quasi-Harmonic Oscillators in Triglycine Sulphate at 4 K -- Defects, atomistic aspects -- Dielectric Relaxations in Dy2O2 -- Steady-State Creep and Strain Transients for Stress Change Tests in an Al-0.4 wt% Li Solid Solution Alloy -- Diffusion and Recrystallization Processes during Annealing of N+- and P+- Implanted LiNbO 3 -- Dissociation of Superdislocations and Damping in the Ll2 Ordered Structure -- Dislocation-Structure Changes during the Dip Tests and the Dynamical Internal Stress in Al-Mg Alloys at High Temperatures -- The Strength and Plasticity of GaAs in Saturated Melts of Solvent Metals at the Temperature of Epitaxy -- Magnetism -- Magnetic Properties and 57 Fe Mössbauer Effect in V 1-x Fe x Alloys -- Elastic Behaviour of Mixed Li-Ni Ferrites -- Extended electronic states and transitions -- Monte-Carlo Simulation of keV-Electron Scattering in Solid Targets -- Localized electronic states and transitions -- Reflection and Fluorescence Emission Spectra in the Ag 1-x Cu x I System -- On the Kinetics of X-Ray Induced Luminescence in Natural Quartz -- Photoluminescence Spectra of Pb 1-x Sn x Te Epitaxial Layers and Heterostructures up to Room Temperature -- Interpretation of the Curves of Thermally Stimulated Luminescence in the Case of Tunneling Recombination -- Electric transport -- The Electronic Properties of Macromolecular Structures with Conjugated Bonds Obtained by Chemical Modification of Certain Aliphatic Polymers -- Negative Charge Transport in Fluorethylenepropylene by the Constant Current Method -- Properties of Sputtered Amorphous Silicon Films Prepared under a Reduced Pumping Speed -- A New Model for AC Conduction in Disordered Solids -- Microwave Anisotropy and Dichroism of Ferroelectric Crystals CH 3 NH 3 HgCl 3 -- Theory of Transient Currents in Dielectrics at a Limited Level of Single Injection -- Charge Transport in Cu-Cd Ferrospinels -- Double Source Photoconductivity of InP:Fe -- Device-related phenomena -- The Characteristics of Thin-Film Gallium Phosphide MOS Structures with a Tunnel Transparent Native Anodic Oxide -- N-CdS/p-AgInSe2 Solar Cells by Electrodeposition -- Ion Beam Contacting of Silicon. II. Antimony in n-Silicon -- Combination of a Silicon Photodiode and a Scintillator as a Dose Rate Detector -- A Simple Model of MOS Transistors on Large-Grain Polycrystalline Silicon -- Radiation Effects in a Photo-Coupler with High-Energy Electrons and y-Rays and Recovery by Current Annealing -- Short Notes -- Structure Images of the Hexagonal Nb 5 Ge 3 (D88) Structure -- Stress-Induced Isothermal Formation of Films during LPE Growth of III-V Compounds with a/a=0 -- Atomic Arrangement in Amorphous Er4Co3 -- Mass-Spectrometry of Tungsten-Silicon System -- On the Connection between the Melting Temperature and the Parameters Obtained from Thermally Stimulated Depolarization Experiments -- On the Free Energies of Hexagonal Dislocation Loops at High Temperatures -- On the Behaviour of Iodine in PbTe and SnTe -- Doppler Broadening of the Annihilation Gamma Line in KCl and LiF -- On Obtaining f-T Characteristics without Hysteresis in Quartz -- Preparation and Magnetic Properties of YMnSi -- Some Remarks on the Applicability of the Positron Annihilation Technique for Studying the Electronic Structure of Metallic Glasses -- An Approximate Approach to Absorption Correction in Electron-Probe Microanalysis -- The Absorption Edge of Lead(II) in Oxide Systems -- The Influence of Isoelectronic Impurities on Intrinsic Deep Levels in Liquid Phase Epitaxial Gallium Arsenide -- A Simple Method for the Determination of Both Photoionization and Photoneutralization Cross Sections of Deep Levels by Optical DLTS -- On the Thermal Resistance and Its Possible Role in Thermoluminescence Measurements -- Drift Mobility of Electrons Parallel to the c-Axis in InSe -- Electrical Conductivity Measurements to Test for Rotating Sulfate Ions in Fast Ion Conductors -- Electrical Properties of CaMnO 3-o -- In 2 O 3 and In 2 O 3 :Sn (ITO) Films by Post-Oxidation of Metal Films -- Optimization of the Heat Treatment for Forming AuGe Based Contacts to n-GaAs -- Coordinate Sensitive Photoelement on the Basis of the Photoelectret State in Vitreous Semiconductors -- Optoelectronic Switches on the Basis of Mercuric Iodide (Red Phase, a-Hgl 2 ) -- Optical Effect in Normally-Off GaAs MESFET -- Pre-Printed Titles -- Pre-Printed Titles of papers to be published in the next issues of physica status solidi (a) and physica status olidi (b) -- Backmatter |
---|---|
Format: | Mode of access: Internet via World Wide Web. |
ISBN: | 9783112495124 9783110637342 |
DOI: | 10.1515/9783112495124 |
Access: | restricted access |
Hierarchical level: | Monograph |
Statement of Responsibility: | ed. by Görlich. |
Similar Items
-
Physica status solidi. / Volume 2, Number 5, : 1962 / / ed. by E Gutsche.
Published: ([2022]) -
Physica status solidi. / Volume 2, Number 6, : 1962 / / ed. by E Gutsche.
Published: ([2022]) -
Physica status solidi. / Volume 2, Number 12, : 1962 / / ed. by E Gutsche.
Published: ([2022]) -
Physica status solidi. / Subject and Author Index 1990 ; Physica Status Solidi (b) Basic research, Volumes 157 to 162. Physica Status Solidi (a) Applied research, Volumes 117 to 122 / / ed. by E. Gutsche.
Published: ([2022]) -
Physica status solidi. / Subject and Author Index 1986 ; Physica Status Solidi (b). Basic research, Volumes 133–138. Physica status solidi (a). Applied Research, Volumes 93–98 / / ed. by E. Borchardt.
Published: ([2022])