Physica status solidi / A. / Volume 77, Number 2, : June 16 / / ed. by Görlich.

• Superior document: Title is part of eBook package: De Gruyter DGBA Reference Works <1990
• MitwirkendeR: Alcala, R.,; Aleksandkov, A. S.,; Alexandrova, S.,; Anagnostopoulos, A. N.,; Andreev, G. A.,; Angadi, M. A.,; Apostol, I.,; Arias, A. G.,; Ashrit, P. V.,; Baal, C. M. van,; Baginskii, I. L.,; Bahgat, A. A.,; Balčiūnienė, M.,; Bbidge, B.,; Belyantsev, A. M.,; Borkovskaya, O. Yu.,; Breitenstein, O.,; Brinkman, A. W.,; Brun, G.,; Brückner, U.,; Calderón, E.,; Campet, G.,; Cervenak, J.,; Chadraabal, Sh.,; Chandra, M. M.,; Chaoui, R.,; Chaudhary, R. K.,; Chen, Y.,; Cherepanova, T. A.,; Chertanov, M. I.,; Chyi, J. I.,; Claverie, J.,; Cohen, A. J.,; Conte, D.,; Coquillat, D.,; Cristoloveanu, S.,; Demkovicsová, Eva,; Deonarine, S.,; Dinescu, M.,; Dkagūnas, A.,; Dmitruk, N. L.,; Dormann, J. L.,; Drabik, W.,; Drozdov, M. N.,; Elesin, V. F.,; Eltsev, Yu. F.,; Fayek, M. K.,; Field, D. W.,; Fineberg, V. I.,; Foley, C. P.,; Gaworzewski, P.,; Gierak, Z.,; Gladyshchuk, A. A.,; Golikova, O. A.,; Gribkovskii, V. P.,; Haefner, H.,; Hagenmuller, P.,; Hari Babu, V.,; Hevesi, I.,; Hoshikawa, T.,; Hrabański, R.,; Huang, T.,; Iqbal Ahmed, Md.,; Janezic, G. G.,; Jung, Th.,; Jäger, C.,; Kalmykova, N. P.,; Kaminskii, A. A.,; Kang, K. N.,; Kaschieva, S. B.,; Kawai, Y.,; Kazeko, M. P.,; Kido, H.,; Kiveris, A.,; Klabes, R.,; Kleinn, W.,; Klimov, V. A.,; Koizumi, M.,; Kolomiets, B. T.,; Konakova, R. V.,; Konč, M.,; Korczak, Z.,; Kordos, P.,; Kostsov, E. G.,; Koziejowska, A. S.,; Kramar, G. P.,; Kreutz, E. W.,; Krishna Rao, A. V.,; Kuila, S. P.,; Kuramochi, N.,; Kushev, D. B.,; Le Flem, G.,; Lehr, A.,; Levitan, M. L.,; Lin, M. D.,; Lin, M. S.,; Linke, E.,; Litovskii, R. N.,; Lokshin, M. M.,; Lou, J. C.,; Lysenko, V. S.,; Mach, R.,; Makariūnas, K.,; Manolikas, C.,; Maurin, M.,; Meerson, E. E.,; Men, A. N.,; Men, B. A.,; Mendiratta, R. G.,; Michailovits, L.,; Mihailescu, I. N.,; Mizubayashi, H.,; Moroń, J. W.,; Morvič, M.,; Mukherjee, R. N.,; Müller, G. O.,; Müller, M.,; Nanai, L.,; Narula, G. K.,; Nazarov, A. N.,; Nebauer, E.,; Nedev, N. R.,; Neely, D. F.,; Nguyen, T. H.,; Nogues, M.,; Oelgart, G.,; Ogawa, T.,; Okuda, S.,; Orera, V. M.,; Ovanesyan, K. L.,; Panknin, D.,; Papadopoulos, D.,; Parashchuk, V. V.,; Patel, N. D.,; Petrosyan, A. G.,; Phan, H. K.,; Pillai, P. K. C.,; Pipinys, P.,; Pistoulet, B.,; Plakhty, V. P.,; Popov, A. S.,; Poulin, F.,; Pranevičius, L.,; Prasad, M.,; Ram Kumar, K.,; Rao, K. V.,; Ratajczak, H.,; Reddy, K. N.,; Reulke, R.,; Rheinländer, B.,; Rimeika, A.,; Rodriguez, V. D.,; Rudenko, T. E.,; Ruoff, A. L.,; Sakalas, A.,; Samatov, S.,; Satyam, M.,; Sche, S.,; Schmalz, K.,; Sen, S. C.,; Shakhovtsov, V. I.,; Sherbakova, M. F.,; Shimada, M.,; Shpunt, V. Kh.,; Sidorin, A. V.,; Slančo, P.,; Smirnov, O. P.,; Smorgonskaya, E. A.,; Sodolski, H.,; Srivastwa, D. N. S.,; Starikov, M. A.,; Stegmann, R.,; Subba Rao, U. V.,; Subotowicz, M.,; Syhre, H.,; Szekeres, A.,; Taguchi, T.,; Tansley, T. L.,; Tedenac, J. C.,; Thuillier, J. C.,; Tima, T.,; Tkhorik, Yu. A.,; Tomas, A.,; Toruń, J.,; Tripathi, A. K.,; Tuck, B.,; Türe, I. E.,; Vesnin, Yu. I.,; Waters, D. N.,; Wieser, E.,; Winter, U.,; Wollbrandt, J.,; Woods, J.,; Wosinski, T.,; Yablonskii, G. P.,; Zaitsevskii, I. L.,; Zakovryashin, S. P.,; Zaumseil, P.,; Zentko, A.,; Zhang, J.,; Zubauskas, G.,; Zubritskii, V. V.,
• HerausgeberIn: Görlich,
• Place / Publishing House: Berlin ;, Boston : : De Gruyter, , [2022]; ©1983
• Bliain Foilsithe: 2022
• Eagrán: Reprint 2021
• Teanga: English
• Sraith: Physica status solidi / A. ; Volume 77, Number 2
• Cur Síos Fisiciúil: 1 online resource (512 p.)
• Other title: Frontmatter --; Contents --; Original Papers --; The Effect of Spatial Variation of a High-Frequency Field on the Instability Occurrence in Inhomogeneous Semiconductors --; Double Injection Current and Field Effect in SOS Diodes --; Conduction Mechanism of Some "Quasi-Amorphous" Semiconductors on the Basis of Boron --; Influence of the Ground State Symmetry on the Qualitative Form of Ordering Phase Diagram --; Correlations of the 119Sn Mossbauer Isomer Shift with Interatomic Distances for Complex Tetrahedral Semiconductors --; Minority Carrier Lifetime in Polycrystalline Semiconductors --; Temperature Dependence of Electroluminescence in CdF2 Thin Films Doped with Rare Earth --; Analysis of the 215 °C Glow Peak in Li-Doped KCl Single Crystals --; Resonance and Relaxation of Domain Walls in Polycrystalline Ferrites --; Optical Dispersion in Zinc Oxide --; Structural and Galvanomagnetic Properties of Pb1-x MnxTe Single Crystals Grown by the Bridgman-Stockbarger Method --; On the Role of Intrasublattice Interactions in YIG with Diamagnetically Substituted a-Sublattice --; On the Analytical Methods of Line Defect and Beam Direction Determinations --; The Influence of Texture on the X-Ray Determination of Residual Strains in Ground or Worn Surfaces --; Degradation of Yellow Light-Emitting GaAs0.1P0.9: N Diodes --; Electron Traps and Deep Levels in Cadmium Selenide --; Investigations of Mechanically Induced Excited States on Cleavage Planes of Ionic Crystals --; Dose Dependence of the Flash Lamp Annealing oi Arsenic-Implanted Silicon --; Sublattice Models of the Binary Crystal Growth --; Oxygen-Related Donors Formed at 600 °C in Silicon in Dependence on Oxygen and Carbon Content --; Size Effect on the Magnetoresistance of p-InSb --; Comparison of the Structure and the Electric Properties of ZnIn2S4(III)- and CdInGaS4-Layered Crystals --; Influence of Covalent Bonding on the Photoelectrochemical Properties of Some Perovskite-Type Related Compounds --; Cation Ordering in LiFe5O8 Studied by Mössbauer Spectroscopy and X-Ray Crystallography --; Relationships among Trapped Hole and Trapped Electron Centers in Oxidized Soda-Silica Glasses of High Purity --; Thermoluminescence of X-Irradiated CaO and CaO:Li Single Crystals --; Dislocation Breakaway at Low Temperatures in Nb --; Thermoluminescence and Optical Absorption Studies of Z1-Centres in NaCl Crystals Doped with Terbium --; The Effect of Annealing Temperature on the Electron Concentration of Hg0.3Cd0.7Te --; On the Elastic Constants and Structure of the Pure Inorganic Oxide Glasses --; Hole Effective Mass and Impurity Levels in Undoped AgTlTe --; Damage of V2O5 Single Crystals by Powerful Pulsed CO2 Laser Irradiation --; The Effect of Deposition Parameters on the Electrical Properties of Thin Ytterbium Films --; A Study of Absorption Currents in Polycarbonate :Polypropylene Blend --; The Influence of Defect Surface Layers on the Capacitive Properties of MOS Structures --; Photoconductivity in n-Type InP:Fe --; Schottky Barrier Characteristics at Low Temperatures --; RF Annealing of Defects Induced in SiO2 by Oxygen Plasma --; The Influence of Defects on Low-Temperature Resistivity of Intermetallic Compounds with A-15 Structure --; A Reexamination of Diffraction Data on Zinc to Determine Anharmonic Components in the One-Particle-Potential Model --; Electrical and Optical Characteristics of GaAs0.6 P0.4 LEDs Fabricated by Zn Semi-Closed Diffusion Method --; DC Conductivity and Electric Relaxation Currents in a Polyester Polymer --; Superconductivity and Decay Phenomena of Nb3Al-Nb3Ge Solid Solutions --; Streamer Discharges in Semiconductors --; Recovery of Structural Defects in Molybdenum --; Electrical Resistivity and Hall Effect in Thin Amorphous UFe Films --; Preferential Precipitation on Extended Edge Dislocations in NaCl Crystals --; Ultraviolet Absorption of T1+ Ion in K2O-KBr-B2O3 and Na2O-NaBr-B2O3 Glasses --; On the Influence of the Non-Homogeneous Structure on the Current-Voltage Behaviour of Chalcogenide Vitreous Semiconductors --; Erratum --; Short Notes --; Figures --; Pulse Technique for Flat-Band Voltage Measurements in MIS Structures --; Domain Wall Motions Due to External Stresses in a Mn-Zn Ferrite Single Crystal --; Scanning-DLTS Investigation of the EL 2 Level in Plastically Deformed GaAs --; Diffusion-Limited Carrier Lifetime in GaP:N LED --; Crystal Growth and Neutral-Acceptor Bound-Exciton Emission of ZnCdTe by THM with Te Solvent --; Synthesis and Magnetic Properties of RCuSi (R = Y, Ce, Nd, Sm, Gd, Ho) --; The Influence of Stress on the Fine Structure of Schottky Diode I-U Characteristics in the Breakdown Region --; Radiation Effects on the Metal-GaP Interface --; Measurement of the Electrothermal Nonlinearity and Thermal Relaxation Times of Thin Metal Films --; Detection of Surface Imperfections at Polished Silicon Wafers by TCD Measurements --; EPR of Mn2+ in [Mg(H2O6)] SnCl6 Single Crystals --; Determination of Residual Resistivity and Observation of Resistance Recovery from Current-Voltage Curves of Short Epitaxial Gold Thin Films --; On the Role of Exact Boundary Conditions in Phototransport Phenomena; Case of SI-GaAs --; Dielectric Properties of Sm or Gd Doped CaF2 Single Crystals --; Crystallization in a Fluorozirconate Glass: Determination of the 19F Chemical Shift in β-BaZrF6 --; Ion Beam Induced Mixing in Bubble Garnet Films --; Stimulated Emission of Pr3+ Ions in YAlO3 Crystals --; On the Mechanism of Electron Impact Excited Luminescence Devices --; Effect of Some Additives on Nickel-Zinc Ferrite Losses --; Very Short Diffusions of Silver in the III-V Semiconductors --; Pressure-Induced Phase Transitions of HgTe --; The Nature of Stage I-II Structural Phase Transition in the Layer Compound RbVF4 --; Interdiffusion Profiles of AuGe/n-GaAs Ohmic Contacts Studied by AES --; Pre-Printed Titles
• Formáid: Mode of access: Internet via World Wide Web.
• ISBN: 9783112494547; 9783110637342
• DOI: 10.1515/9783112494547
• Rochtain: restricted access
• Hierarchical level: Monograph
• Statement of Responsibility: ed. by Görlich.