Physica status solidi / A. / Volume 65, Number 2, : June 16 / / ed. by Görlich.

• Superior document: Title is part of eBook package: De Gruyter DGBA Reference Works <1990
• MitwirkendeR: Abou El Ela, A. H.,; Acharya, S.,; Aksenov, O. E.,; Allen, J. W.,; Aluker, E. D.,; Amelinckx, S.,; Arnold, G.,; Aust, K. T.,; Babu, M. V.,; Badr, S. T.,; Bagratishvili, G. D.,; Ballandovich, V. S.,; Bara, J. J.,; Batirov, T. M.,; Bohmhammel, K.,; Bostanjoglo, O.,; Bukreev, V. A.,; Chang, S.-L.,; Charan, Sh.,; Chen, H. S.,; Danilin, A. B.,; Dehe, G.,; Delafond, J.,; Deus, P.,; Dey, D. K.,; Donolato, C.,; Dorosh, I. R.,; Dudkevich, V. P.,; Dvurechenskii, A. V.,; Dzhanelidze, R. B.,; Däbritz, S.,; Eaton, H. C.,; Eid, A. H.,; Erben, N.,; Fesenko, E. G.,; Fridkin, V. M.,; Fritzer, H. P.,; Geiler, H. D.,; Golovko, Yu. I.,; Gorokhovatskii, Yu. A.,; Goshal, A. K.,; Graja, A.,; Grilhé, J.,; Gruber, H.,; Gubkin, A. N.,; Götz, G.,; Günter, P.,; Heimke, W.,; Heinig, K. H.,; Hervieu, M.,; Hohmuth, K.,; Houghton, A. J. N.,; Jain, R. K.,; Januškevičius, Z.,; Jenichen, B.,; Jishiashvili, D. A.,; Josyulu, O. S.,; Kabisch, R.,; Kakati, D.,; Kamarzin, A. A.,; Kaufmann, H.-J.,; Kawamura, H.,; Khare, M.,; Khare, R. P.,; Kleinstück, K.,; Knauer, U.,; Koizumi, M.,; Kolmakova, N. P.,; Korech, N.,; Kotewicz, K.,; Kovalenko, V. F.,; Kończak, S.,; Krautz, E.,; Krumins, A.,; Kumakhov, M. A.,; Kuphal, E.,; Kuzminov, Yu. S.,; Köhler, R.,; Landau, A. I.,; Lecomte, J.,; Leslie, T. C.,; Lobotka, P.,; Loup, J. P.,; Loutfy, R. O.,; Lusis, D. J.,; Löffler, H.,; Löschke, K.,; Mahmoud, S.,; Malovitskii, Yu. I.,; Margulev, A. I.,; Marucha, Cz.,; Mazur, M. M.,; Mezina, I. P.,; Mikhelashvili, V. N.,; Mimault, J.,; Minami, T.,; Mitsek, A. I.,; Mukhortov, V. M.,; Mukhortov, Vl. M.,; Muralev, V. A.,; Naidu, B. S.,; Nanto, H.,; Natsik, V. D.,; Nichugovskii, G. I.,; Nickel, H.,; Novikov, V. I.,; Nowak, M.,; Nurligareev, D. Kh.,; Oelgart, G.,; Osiko, V. V.,; Pal, A. K.,; Pal, D.,; Paufler, P.,; Peka, G. P.,; Pfeiffer, H.,; Piskanovskii, L. V.,; Polozkov, N. M.,; Predvoditelev, A. A.,; Prokhorov, A. M.,; Pustovoit, V. I.,; Radomsky, C.,; Rafalowicz, J.,; Ramanan, S.,; Rao, L. V.,; Rauschenbach, B.,; Raveau, B.,; Ravindra, N. M.,; Reddy, P. J.,; Richter, E.,; Rosin, Th.,; Ryazantse, I. A.,; Sakalas, A.,; Schneider, H. A.,; Shepel, L. G.,; Shimada, M.,; Shimizu, M.,; Shringi, S. N.,; Sindeev, Yu. G.,; Sirota, D. I.,; Smertenko, P. S.,; Sobhanadri, J.,; Srivastava, C. M.,; Srivastava, O. N.,; Srivastava, V. K.,; Stephenson, J. D.,; Stepurenko, A. A.,; Sthanapati, J.,; Suwalski, J.,; Swarup, P.,; Swietlik, R.,; Tairov, Yu. M.,; Takata, S.,; Tandle, D.M.,; Tendeloo, G. van,; Terao, K.,; Timofeev, P. A.,; Tkachenko, N. V.,; Tsukuma, K.,; Tuck, B.,; Tychina, I.,; Uthanna, S.,; Vas Cong, H.,; Verkhovskaya, K. A.,; Verma, S. N.,; Verner, V. D.,; Veselov, V. I.,; Violina, G. N.,; Voronov, V. V.,; Vávra, I.,; Wagner, H.,; Wagner, M.,; Waseda, Y.,; Wieser, E.,; Woittenneck, H.,; Zhokhov, V. Z.,; Zyuganov, A. N.,
• HerausgeberIn: Görlich,
• Place / Publishing House: Berlin ;, Boston : : De Gruyter, , [2022]; ©1981
• Year of Publication: 2022
• Edition: Reprint 2021
• Language: English
• Series: Physica status solidi / A. ; Volume 65, Number 2
• Physical Description: 1 online resource (469 p.)
• Other title: Frontmatter --; Contents --; Original Papers --; The Effect of Dislocation Inertia on the Thermally Activated Low Temperature Plasticity of Materials --; Efficient Narrowing of the Mössbauer Line by Resonant Filtering --; Electron Diffraction and High Resolution Electron Microscopy Study of Ordering in the Gold-Manganese System --; High-Frequency Photomagnetoelectric Method for Determining Semiconductor Parameters --; Silicon Amorphization by Ion Beam with Radiation Heating --; Internal Size Effect in Condensed BaTiO3 Ferroelectric Films --; Simulation of Dislocation Motion through a Dislocation Forest --; The Far-Infrared Spectra of Some Mixed Cobalt Zinc and Magnesium Zinc Ferrites --; Thermally Stimulated Depolarization for Quasi-Continuous Distribution of Relaxators according to Activation Energy and Frequency Factor --; Some Features of Acoustoelectronic Interaction in p-Te in Magnetic Field --; Grain Boundary Dislocation Observations Using the Field Ion Microscope --; Metamagnetism of Two-Sublattice Uniaxial Antiferromagnets --; Barium-Strontium Niobate Crystals for Optical Information Recording --; The Aluminium Thermal Conductivity and Deviation from Matthiessen's Rule --; Photoluminescent Methods for Determination of Graded Band-Gap Semiconductor Parameters --; Experimental and Simulated X-Ray Contrast of Striations for Nearly Plane Waves in the Laue Case --; Thermal Quenching of Photoluminescence in ZnS:Mn and ZnSerMn --; Excitations and Phases of Two-Beam Dynamical Bragg Reflection of X-Rays for Infinitely Thick Crystals --; Specific Heat, Debye Temperature, and Related Properties of Compound Semiconductors AIIBIVCV2 --; H . A. SCHNEIDER --; Deep Level Spectroscopy and Schottky Barrier Characteristics of LPE n- and p-InP --; Magnetic Susceptibility and Electrical Properties of the x-Phase M017 O47 with Substitutions of Molybdenum --; New Phase Transitions in Arsenic Films --; An Interpretation of White (Synchrotron) X-Radiation Laue (Topograph) Patterns by Means of the Gnomonic Projection --; Impurity Profile on GaP Diodes in the Neighbourhood of a p-n Junction --; Luminescence oi Activated Alkali Halide Crystals at Excitation in the Fundamental Absorption Region --; Spatial Distributions of Channeled Ions --; A Simple Approach to Reactive Processes on the Interface during Crystal Growth --; Shallow Diffusions of Zinc in GaAs at 700 °C --; An Analytical Model of SEM and STEM Charge Collection Images of Dislocations in Thin Semiconductor Layers --; Effect of Temperature on the Dark and Photoconductivity of Metal-Free Phthalocyanine --; The Cation Distribution in the Spinel System Fe3-xGaxO4 --; Laser Annealing of Thin Buried Amorphous Layers in Silicon --; Heavy Doping Effects in Bipolar Silicon Transistors and p-n Junction Silicon Solar Cells --; Structure of Pt75P25 Glass --; Mechanism of Charge Flow through the M-Ge3N4-GaAs Structure --; Acceptor Boron in α-SiC (6H): Investigation by the Photocapacitance Method --; Electronic Behaviour of SnS2 Crystals --; A New Method of Analysis of Traps Taking Part in the Electroluminescence Process --; Mössbauer Study of the Low-Temperature Phase of Magnetite --; Temperature Dependence of the Energy Gap in Pyrite (FeS2) --; Non-Stoichiometry and Electrical Conductivity of Strontium Mobates with Perovskite Structure --; Numerical Analysis of Step Junction pvn Diode with Different Lifetime Models --; Short Notes --; Figures --; Spinodal Decomposition in Amorphous Boron -Implanted Iron Films --; TEM In-Situ Observation of Electromig ration in Al Stripes with Quasi-Bamboo Structure --; On the Composition and Crystallinity of the Titanium-Rich Second Phase in BaTiO3 Ceramic --; Electrical Properties of CdSe Thin Films --; New Reversal Process of Neel Walls Due to Nanosecond Field Pulses --; Commentaires sur la rèsistivité électrique des alliages Al-Zn et la décomposition spinodale --; Einige Bemerkungen zur Arbeit Commentaires sur la résistivité électrique des alliages Al-Zn et la décomposition spinodale / 1 / --; Photoluminescence in Spattered ZnO Thin Films --; Electrical Conductivity and Thermopower Measurements on Silver Doped Tellurium Films --; On the Transport Properties of Chromium-Aluminium Alloys at Low Temperatures --; Some Optical Properties of Thin Nickel Films --; Electrical Properties of CdP2 Single Crystals --; Phase Transitions in Iron Alloys --; Single Crystal Magnetic Studies on the y -Form of Bis N-Methylsalicylaldimine Copper (II) --; Photoconductivity and Anomalous Photovoltaic Effect in Cubic Piezoelectric La2S3 --; On the Dielectric Properties of Tetracyanoquinodimethane (TCNQ) Salts with N-Methyl Derivatives of Pyridine --; Influence of Lattice Defects on the Superconducting Behaviour of Implanted PdHx Thin Film Layers --; Kossel Line Profiles near Dislocations in GaP --; Superconductive Compound Nb5Se2S2 with Ti5Te4 Structure --; Preparation and Properties of GaAsSb and GaAlAsSb Epi-Layers --; Erratum --; Pre-Printed Titles
• Format: Mode of access: Internet via World Wide Web.
• ISBN: 9783112492925; 9783110637342
• DOI: 10.1515/9783112492925
• Access: restricted access
• Hierarchical level: Monograph
• Statement of Responsibility: ed. by Görlich.